rev. 1.3 1 preliminary 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 megabit 3.3v static ram 128k x 8-bit revolutionary pinout features n high-speed access times com?: 9, 10, 12, 15 and 20 ns ind?.: 12, 15 and 20 ns automotive: 15 and 20 ns n low power operation (typical) - pdm31034sa active: 200 mw standby: 15 mw n single +3.3v ( 0.3v) power supply n ttl-compatible inputs and outputs n packages plastic soj (400 mil) - so plastic soj (300 mil) - tso plastic tsop (ii) - t description the pdm31034 is a high-performance cmos static ram organized as 131,072 x 8 bits. writing is accomplished when the write enable (we ) and the chip enable (ce ) inputs are both low. reading is accomplished when we remains high and ce and oe are both low. the pdm31034 operates from a single +3.3v power supply and all the inputs and outputs are fully ttl- compatible. the pdm31034 is available in a 32-pin 400 mil plas- tic soj and 300 mil plastic soj, and a 32-pin plastic tsop (ii) package in revolutionary pinout. pdm31034 a16 i/o0 i/o7 ce we addresses row address buffer memory array 512 x 256 x 8 (1,048,576) input data control oe control column address buffer a9 column i/o a8 a0 row decoder column decoder functional block diagram
preliminary pdm31034 2 rev. 1.3 absolute maximum ratings (1) note: 1. stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. exposure to absolute maxi- mum rating conditions for extended periods may affect reliability. 2. appropriate thermal calculations should be performed in all cases and speci?ally for those where the chosen package has a large thermal resistance (e.g., tsop). the cal- culation should be of the form : t j = t a + p * q ja where t a is the ambient temperature, p is average operating power and q ja the thermal resistance of the package. for this product, use the following q ja values: soj: 72 o c/w tsop: 95 o c/w symbol rating com l. ind. auto. unit v term terminal voltage with respect to v ss ?.5 to +4.6 ?.5 to +4.6 ?.5 to +4.6 v t bias temperature under bias ?5 to +125 ?5 to +135 ?5 to +145 c t stg storage temperature ?5 to +125 ?5 to +150 ?5 to +150 c p t power dissipation 900 900 900 mw i out dc output current 50 50 50 ma t j maximum junction temperature (2) 125 125 125 c a3
a2
a1
a0
ce
i/o0
i/o1
vcc
vss
i/o2
i/o3
we
a16
a15
a14
a13 32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17 a4
a5
a6
a7
oe
i/o7
i/o6
vss
vcc
i/o5
i/o4
a8
a9
a10
a11
a12 1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1 2 3 4 5 6 7 8 9 10 11 12 15 16 17 18 19 20 21 22 23 24 a3
a2
a1
a0
ce
i/o0
i/o1
vcc
vss
i/o2
i/o3
we
a16
a15
a14
a13 a4
a5
a6
a7
oe
i/o7
i/o6
vss
vcc
i/o5
i/o4
a8
a9
a10
a11
a12 13 14 25 26 27 28 29 30 31 32 truth table (1) note: 1. h = v ih , l = v il , x = don? care ce oe we i/o mode llhd out read lxld in write l h h hi-z output disable h x x hi-z standby pin description name description a16-a0 address inputs i/o7-i/o0 data inputs/outputs oe output enable input we write enable input ce chip enable input nc no connect v cc power (+3.3v) v ss ground pin con?uration soj tsop
preliminary pdm31034 rev. 1.3 3 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 recommended dc operating conditions dc electrical characteristics (v cc = 3.3v 0.3v) note:1.v il (min) = ?.0v for pulse width less than 20 ns power supply characteristics notes: all values are maximum guaranteed values. 1. v cc = 3.3v + 5% symbol parameter min. typ. max. unit v cc supply voltage 3.0 3.3 3.6 v v ss supply voltage 0 0 0 v industrial ambient temperature ?0 25 85 c commercial ambient temperature ? 25 70 c symbol parameter test conditions min. max. unit i li input leakage current v cc = max., v in = v ss to v cc com?/ ind. ? 5 m a i lo output leakage current v cc = max., ce = v ih , v out = v ss to v cc com?/ ind. ? 5 m a v il input low voltage ?.3 (1) 0.8 v v ih input high voltage 2.2 vcc+0.3 v v ol output low voltage i ol = 8 ma, v cc = min. 0.4 v v oh output high voltage i oh = ? ma, v cc = min. 2.4 v -9 (1) -10 (1) -12 -15 -20 symbol parameter com l. com l. com l ind. com l ind. auto. com l ind. auto. unit i cc operating current ce = v il 125 115 110 115 100 105 110 90 95 110 ma f = f max = 1/t rc v cc = max. i out = 0 ma i sb standby current ce = v ih 20 20 20 20 20 20 30 20 20 30 ma f = f max = 1/t rc v cc = max. i sb1 full standby current ce 3 v cc ?0.2v 5 5 5555105510ma f = 0 v cc = max., v in 3 v cc ?0.2v or 0.2v
preliminary pdm31034 4 rev. 1.3 capacitance (1) (t a = +25 c, f = 1.0 mhz) note:1. this parameter is determined by device characterization but is not production tested. ac test conditions symbol parameter max. unit c in input capacitance 8 pf c out output capacitance 8 pf input pulse levels v ss to 3.0v input rise and fall times 2.5 ns input timing reference levels 1.5v output reference levels 1.5v output load see figures 1 and 2 figure 1. output load equivalent figure 2. output load equivalent (for t lzce , t hzce , t lzwe , t hzwe , t lzoe , t hzoe ) +3.3v +3.3v 317 w 317 w 351 w 351 w d out d out 30 pf 5 pf
preliminary pdm31034 rev. 1.3 5 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 read cycle no. 1 (4, 5) read cycle no. 2 (2, 4, 6) ac electrical characteristics description -9 -10 -12 -15 -20 read cycle sym min. max. min. max. min. max. min. max. min. max. units read cycle time t rc 9 10121520 ns address access time t aa 9 10121520ns chip enable access time t ace 9 10121520ns output hold from address change t oh 33333ns chip enable to output in low z (1,3) t lzce 33333ns chip disable to output in high z (1,2,3) t hzce 56789ns chip enable to power up time (3) t pu 00000ns chip disable to power down time (3) t pd 9 10121520ns output enable access time t aoe 56789ns output enable to output in low z (1,3) t lzoe 00000ns output disable to output in high z (1,3) t hzoe 56789ns t rc
t aa
t oh
previous data valid d out addr
data valid t rc t ace t aa t lzce t hzce t lzoe t hzoe t aoe addr ce1 ce2 oe d out data valid
preliminary pdm31034 6 rev. 1.3 write cycle no. 1 (write enable controlled) write cycle no. 2 (write enable controlled) t wc
t aw
t wp
t cw
t ah
t as
t dh
t ds
t lzwe
t hzwe
addr
ce
we
d out high-z d in data valid note: output enable (oe ) is inactive (high) t wc
t aw
t wp
t cw
t ah
t as
t dh
t ds
addr
ce
we
d out high-z d in data valid
preliminary pdm31034 rev. 1.3 7 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 write cycle no. 3 (chip enable controlled) ac electrical characteristics notes: (for two previous electrical characteristics tables) 1. the parameter is tested with c l = 5 pf as shown in figure 2. transition is measured 200 mv from steady state voltage. 2. at any given temperature and voltage condition, t hzce is less than t lzce . 3. this parameter is sampled. 4. we is high for a read cycle. 5. the device is continuously selected. chip enable is held in their active state. 6. the address is valid prior to or coincident with the latest occuring chip enable. description -9 -10 -12 -15 -20 write cycle sym min. max. min. max. min. max. min. max. min. max. units write cycle time t wc 9 10121520 ns chip enable active time t cw 8 9 10 11 12 ns address valid to end of write t aw 8 9 10 11 12 ns address setup time t as 00000ns address hold from end of write t ah 00000ns write pulse width t wp 7 8 9 10 11 ns data setup time t ds 56789ns data hold time t dh 00000ns write disable to output in low z (1,3) t lzwe 00000ns write enable to output in high z (1,3) t hzwe 67789ns note: output enable (oe ) is inactive (high) t wc
t aw
t wp
t cw
t ah
t as
t dh
t ds
addr
ce
we
d out high-z d in data valid
preliminary pdm31034 8 rev. 1.3 ordering information device type power speed package type process temp. range preferred shipping container commercial (0 to +70 c) industrial (?0 c to +85 c) 9 commercial only 10 12 15 20 sa standard power blank i a automotive ( ?0 c to +105 c) blank tubes tr tape & reel ty tray pdm31034 - (128kx8) static ram xxxxx x xx x x x so 32-pin 400 mil plastic soj tso 32-pin 300 mil plastic soj t 32-pin plastic tsop (ii) faster memories for a fasterworld
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